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| BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors PNP Silicon Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value -45 -50 -5.0 -500 Unit V V V mAdc 1 2 SOT-23 CASE 318 STYLE 6 3 * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 Unit mW mW/C C/W MARKING DIAGRAM RqJA PD 300 2.4 417 -55 to +150 mW mW/C C/W C 5xx M G G 1 5xx = Device Code xx = A1, B1, or C M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2010 October, 2010 - Rev. 9 1 Publication Order Number: BC807-16LT1/D BC807-16LT1G, BC807-25LT1G, BC807-40LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mA) Collector -Emitter Breakdown Voltage (VEB = 0, IC = -10 mA) Emitter -Base Breakdown Voltage (IE = -1.0 mA) Collector Cutoff Current (VCB = -20 V) (VCB = -20 V, TJ = 150C) ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) (IC = -500 mA, VCE = -1.0 V) Collector -Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) Base -Emitter On Voltage (IC = -500 mA, IB = -1.0 V) SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) fT Cobo 100 - - 10 - - MHz pF VCE(sat) VBE(on) BC807-16 BC807-25 BC807-40 hFE - 100 160 250 40 - - - - - - - - 250 400 600 - -0.7 -1.2 V V V(BR)CEO V(BR)CES V(BR)EBO ICBO -45 -50 -5.0 - - - - - - V V V Symbol Min Typ Max Unit - - - - -100 -5.0 nA mA ORDERING INFORMATION Device BC807-16LT1G BC807-16LT3G BC807-25LT1G BC807-25LT3G BC807-40LT1G BC807-40LT3G 5C 5B1 5A1 Specific Marking Package SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BC807-16LT1G, BC807-25LT1G, BC807-40LT1G TYPICAL CHARACTERISTICS - BC807-16LT1 500 400 300 25C 200 -55C 100 0 150C VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE = 1 V hFE, DC CURRENT GAIN 1 IC/IB = 10 150C 25C 0.1 -55C 0.001 0.01 0.1 1 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current VBE(on), BASE-EMITTER VOLTAGE (V) 1.1 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 150C IC/IB = 10 -55C 25C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V -55C 25C 150C 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current http://onsemi.com 3 BC807-16LT1G, BC807-25LT1G, BC807-40LT1G TYPICAL CHARACTERISTICS - BC807-16LT1 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -10 mA 0 -0.01 -0.1 IC = -100 mA -1.0 -10 IB, BASE CURRENT (mA) -100 Figure 5. Saturation Region V, TEMPERATURE COEFFICIENTS (mV/C) +1.0 qVC for VCE(sat) 0 100 C, CAPACITANCE (pF) Cib 10 -1.0 -2.0 qVB for VBE Cob -1.0 -10 -100 IC, COLLECTOR CURRENT -1000 1.0 -0.1 -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) -100 Figure 6. Temperature Coefficients Figure 7. Capacitances http://onsemi.com 4 BC807-16LT1G, BC807-25LT1G, BC807-40LT1G TYPICAL CHARACTERISTICS - BC807-25LT1 500 400 300 200 -55C 100 0 25C VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 150C hFE, DC CURRENT GAIN VCE = 1 V 1 IC/IB = 10 150C 25C 0.1 -55C 0.001 0.01 0.1 1 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 8. DC Current Gain vs. Collector Current VBE(on), BASE-EMITTER VOLTAGE (V) 1.1 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 150C IC/IB = 10 -55C 25C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 9. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V -55C 25C 150C 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current 1000 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) VCE = 1 V TA = 25C Figure 11. Base Emitter Voltage vs. Collector Current 100 10 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (A) Figure 12. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 5 BC807-16LT1G, BC807-25LT1G, BC807-40LT1G TYPICAL CHARACTERISTICS - BC807-25LT1 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -10 mA 0 -0.01 -0.1 IC = -100 mA -1.0 -10 IB, BASE CURRENT (mA) -100 Figure 13. Saturation Region V, TEMPERATURE COEFFICIENTS (mV/C) +1.0 qVC for VCE(sat) 0 100 C, CAPACITANCE (pF) Cib 10 -1.0 -2.0 qVB for VBE Cob -1.0 -10 -100 IC, COLLECTOR CURRENT -1000 1.0 -0.1 -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) -100 Figure 14. Temperature Coefficients Figure 15. Capacitances http://onsemi.com 6 BC807-16LT1G, BC807-25LT1G, BC807-40LT1G TYPICAL CHARACTERISTICS - BC807-40LT1 1000 800 700 600 500 400 300 200 100 0 0.001 0.01 0.1 1 -55C 25C 150C VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 900 hFE, DC CURRENT GAIN VCE = 1 V 1 IC/IB = 10 150C 25C 0.1 -55C 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 16. DC Current Gain vs. Collector Current VBE(on), BASE-EMITTER VOLTAGE (V) 1.1 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 150C IC/IB = 10 -55C 25C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 17. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V -55C 25C 150C 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 18. Base Emitter Saturation Voltage vs. Collector Current 1000 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) VCE = 1 V TA = 25C Figure 19. Base Emitter Voltage vs. Collector Current 100 10 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (A) Figure 20. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 7 BC807-16LT1G, BC807-25LT1G, BC807-40LT1G TYPICAL CHARACTERISTICS - BC807-40LT1 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -10 mA 0 -0.01 -0.1 IC = -100 mA -1.0 -10 IB, BASE CURRENT (mA) -100 Figure 21. Saturation Region V, TEMPERATURE COEFFICIENTS (mV/C) +1.0 qVC for VCE(sat) 0 100 C, CAPACITANCE (pF) Cib 10 -1.0 -2.0 qVB for VBE Cob -1.0 -10 -100 IC, COLLECTOR CURRENT -1000 1.0 -0.1 -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) -100 Figure 22. Temperature Coefficients Figure 23. Capacitances http://onsemi.com 8 BC807-16LT1G, BC807-25LT1G, BC807-40LT1G TYPICAL CHARACTERISTICS - BC807-16LT1, BC807-25LT1, BC807-40LT1 1 IC, COLLECTOR CURRENT (A) 1S 100 mS 0.1 10 mS 1 mS Thermal Limit 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 24. Safe Operating Area http://onsemi.com 9 BC807-16LT1G, BC807-25LT1G, BC807-40LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 10 BC807-16LT1/D |
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